A1SHB Marking, WPM2015 datasheet(2/5 Pages) KEXIN

2 / 5 page

SMD Type

www.kexin.com.cn

MOSFET

P-Channel MOSFET

WPM2015 (KPM2015)

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=-250μA, VGS=0V

-20

Zero Gate Voltage Drain Current

IDSS

VDS=-16V, VGS=0V

-1

Gate-Body leakage current

IGSS

VDS=0V, VGS=±8V

100

Gate Threshold Voltage

VGS(th)

VDS=VGS , ID=-250μA

-0.4

-0.81

VGS=-4.5V, ID=-2.7A

110

VGS=-2.5V, ID=-2.2A

150

Input Capacitance

Ciss

534

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

7.3

Threshold Gate Charge

Qg(th)

0.5

Gate Source Charge

Qgs

1.25

Gate Drain Charge

Qgd

1.15

Turn-On DelayTime

td(on)

Turn-On Rise Time

6.4

Turn-Off DelayTime

td(off)

Turn-Off Fall Time

Maximum Body-Diode Continuous Current

-0.9

Diode Forward Voltage

VSD

IS=-0.9A,VGS=0V

-1.5

mΩ

VGS=-4.5V, VDS=-10V,

ID=-1.2A, RG=6Ω

RDS(On)

Static Drain-Source On-Resistance

VGS=0V, VDS=-10V, f=1MHz

VGS=-4.5V, VDS=-10V, ID=-2.7A

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Marking

A1SHB

A1SHB Marking, WPM2015 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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