2X Marking, MMBT4401 datasheet(2/3 Pages) LUGUANG

Part #	MMBT4401

Description	NPN Silicon Epitaxial Planar Transistor

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	LUGUANG [Shenzhen Luguang Electronic Technology Co., Ltd]

Direct Link	http://www.luguang.cn/web_en/index.html

Logo

2 / 3 page

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=100μA,IE=0

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA,IC=0

Collector cut-off current

ICEX

VCE=35V,VBE=-0.4V

0.1

μA

Base cut-off current

IBL

VCE=35V,VBE=0.4V

0.1

μA

DC current gain

hFE

VCE=1V,IC=0.1mA

VCE=1V,IC=1.0mA

VCE=1V,IC=10mA

VCE=1V,IC=150mA

VCE=2V,IC=500mA

100

300

Collector-emitter saturation voltage

VCE(sat)

IC=150mA, IB=15mA

IC=500mA, IB=50mA

0.4

0.75

Base-emitter saturation voltage

VBE(sat)

IC=150mA, IB=15mA

IC=500mA, IB=50mA

0.75

0.95

1.2

Transition frequency

VCE=10V, IC= 20mA

f=100MHz

250

MHz

Collector output capacitance

Cob

VCB=5V,IE=0,f=1MHz

6.5

NPN Silicon Epitaxial Planar Transistor

MMBT4401

www.lgesemi.com

mail:lge@lgesemi.com

Revision:201

70701-P1

2X Marking, MMBT4401 Datasheet(PDF) 2 Page - Shenzhen Luguang Electronic Technology Co., Ltd

MMBT4401 Datasheet(HTML) 2 Page - Shenzhen Luguang Electronic Technology Co., Ltd

Html Pages

1 2 3

Datasheet Download

Link URL