 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
R1 Marking, PJM3401PSA Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
|
||||||||||||||||||||||||||||||
PJM3401PSA Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
|
|
1 / 6 page  1 / 6 www.pingjingsemi.com Revision：2.1 Jun-2019 Features High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation Applications Power switching application Hard switched and high frequency circuits Uninterruptible power supply PJM3401PSA P-Enhancement Field Effect Transistor SOT-23 1 2 Gate Source 1. Gate 2.Source 3.Drain Marking: R1 Schematic Diagram Drain 3 Absolute Maximum Ratings Ratings at TA =25℃ unless otherwise specified. Parameter Symbol Value Units Drain-Source Voltage -VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current -ID 4.1 A Power Dissipation PD 1.25 W Junction and Storage Temperature Range TJ, TSTG 150, -55 to 150 °C Thermal Characteristics Parameter Symbol Typ. Units Maximum Junction-to-Ambient Note1 RθJA 100 °C/W |
Similar Description - PJM3401PSA |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
