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7C Marking, CUS10S40 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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CUS10S40 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 6 page ![]() CUS10S40 1 Schottky Barrier Diode Silicon Epitaxial CUS10S40 CUS10S40 CUS10S40 CUS10S40 Start of commercial production 2013-09 1. 1. 1. 1. Applications Applications Applications Applications • High-Speed Switching 2. 2. 2. 2. Features Features Features Features (1) Small package (2) Low forward voltage: VF(2) = 0.45 V (typ.) 3. 3. 3. 3. Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit USC 1: Cathode 2: Anode 2014-04-07 Rev.2.0 |
Similar Description - CUS10S40 |
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