YFW3400A

2 / 5

www.yfwdiode.com

GuangDong YFW Electronics Co, Ltd.

Maximum Ratings at Tc=25°C unless otherwise specified

Characteristics

Test Condition

Symbols

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

30

33

-

V

BVDSS Temperature Coefficient

Reference to 25℃ , ID=1mA

-

0.029

-

V/°C

Static Drain-Source On-Resistance

2

-

20

28

mΩ

-

24

32

31

55

Gate -Threshold Voltage

0.5

0.85

1.2

V

-

-2.82

-

mV/°C

Drain-Source Leakage Current

-

-

1

μA

-

-

5

Gate –Source Leakage Current

-

-

±100

nA

Forward Transconductance

-

25

-

S

Gate Resistance

-

1.5

-

Ω

Total Gate Charge(4.5V)

-

11.5

-

nC

Gate-Source Charge

-

1.6

-

Gate-Drain Charge

-

2.9

-

Turn-on delay time

-

5

-

ns

Rise Time

-

47

-

Turn-Off Delay Time

-

26

-

Fall Time

-

8

-

Input Capacitance

f=1.0MHz

-

860

-

Output Capacitance

-

84

-

Reverse Transfer Capacitance

-

70

-

Continuous Source Current

1,4

-

-

5.8

A

Diode Forward Voltage

2

-

-

1.2

V

Note :

1、.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

Rev:2021Y1