2N7002DWQ

Document number: DS43177 Rev. 2 - 2

2 of 5

www.diodes.com

April 2021

© Diodes Incorporated

2N7002DWQ

Maximum Ratings (@ TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

60

V

Drain-Gate Voltage RGS ≤ 1.0MΩ

VDGR

60

V

Gate-Source Voltage

Continuous

VGSS

±20

V

Pulsed

VGSS

±40

V

Continuous Drain Current (Note 6) VGS = 5V

Steady

State

TA = +25°C

TA = +70°C

TA = +100°C

ID

0.23

0.18

0.14

A

Maximum Continuous Body Diode Forward Current (Note 6)

IS

0.23

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

0.8

A

Thermal Characteristics (@ TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

PD

0.31

W

TA = +70°C

0.2

TA = +100°C

0.12

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

410

°C/W

Total Power Dissipation (Note 6)

TA = +25°C

PD

0.4

W

TA = +70°C

0.25

TA = +100°C

0.15

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

318

°C/W

Thermal Resistance, Junction to Case (Note 6)

Steady State

RθJC

135

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

60

70



V

VGS = 0V, ID = 10µA

Zero Gate Voltage Drain Current

@ TC = +25°C

@ TC = +125°C

IDSS





1.0

500

µA

VDS = 60V, VGS = 0V

Gate-Body Leakage

IGSS





±10

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

1.0



2.0

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

@ TJ = +25°C

@ TJ = +125°C

RDS(ON)



3.2

4.4

7.5

13.5

Ω

VGS = 5.0V, ID = 0.05A

VGS = 10V, ID = 0.5A

On-State Drain Current

ID(ON)

0.5

1.0



A

VGS = 10V, VDS = 7.5V

Forward Transconductance

gFS

80





mS

VDS = 10V, ID = 0.2A

Diode Forward Voltage

VSD



0.78

1.5

V

VGS = 0V, IS = 115mA

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss



22

50

pF

VDS = 25V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss



11

25

pF

Reverse Transfer Capacitance

Crss



2.0

5.0

pF

Turn-On Delay Time

tD(ON)



7.0

20

ns

VDD = 30V, ID = 0.2A,

RL = 150Ω, VGEN = 10V,

RGEN = 25Ω

Turn-Off Delay Time

tD(OFF)



11.0

20

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.