7C Marking, BC847BSH datasheet(4/10 Pages) NEXPERIA

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Nexperia

BC847BSH

45 V, 100 mA NPN/NPN general-purpose double transistor

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V(BR)CBO

collector-base

breakdown voltage

IC = 100 µA; IE = 0 A; Tamb = 25 °C

V(BR)CEO

collector-emitter

breakdown voltage

IC = 2 mA; IB = 0 A; Tamb = 25 °C

V(BR)EBO

emitter-base

breakdown voltage

IC = 0 A; IE = 100 µA; Tamb = 25 °C

VCB = 30 V; IE = 0 A; Tamb = 25 °C

ICBO

collector-base cut-off

current

VCB = 30 V; IE = 0 A; Tj = 150 °C

µA

IEBO

emitter-base cut-off

current

VEB = 7 V; IC = 0 A; Tamb = 25 °C

100

hFE

DC current gain

VCE = 5 V; IC = 2 mA; Tamb = 25 °C

200

300

450

IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C

100

VCEsat

collector-emitter

saturation voltage

IC = 100 mA; IB = 5 mA; pulsed; tp ≤

300 µs; δ ≤ 0.02; Tamb = 25 °C

200

300

IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C

[1]

750

850

VBEsat

base-emitter saturation

voltage

IC = 100 mA; IB = 5 mA; Tamb = 25 °C

875

VCE = 5 V; IC = 2 mA; Tamb = 25 °C

[2]

600

655

700

VBE

base-emitter voltage

VCE = 5 V; IC = 10 mA; Tamb = 25 °C

[2]

705

770

collector capacitance

VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;

Tamb = 25 °C

1.2

emitter capacitance

VEB = 0.5 V; IC = 0 A; ic = 0 A;

f = 1 MHz; Tamb = 25 °C

transition frequency

VCE = 5 V; IC = 10 mA; f = 100 MHz;

Tamb = 25 °C

100

MHz

VCE = 5 V; IC = 0.2 mA; RS = 2 kΩ; f =

10 Hz to 15.7 kHz; Tamb = 25 °C

1.7

noise figure

VCE = 5 V; IC = 0.2 mA; RS = 2 kΩ;

f = 1 kHz; B = 200 Hz; Tamb = 25 °C

3.1

[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.

[2] VBE decreases by about 2 mV/K with increasing temperature.

BC847BSH

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Product data sheet

22 March 2021

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