7C Marking, MMBT2222A datasheet(4/8 Pages) NEXPERIA

4 / 8 page

2004 Jan 16

NXP Semiconductors

Product data sheet

NPN switching transistor

MMBT2222A

THERMAL CHARACTERISTICS

Note

Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

Note

Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-a)

thermal resistance from junction to ambient note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = 60 V

−

IE = 0; VCB = 60 V; Tj = 125 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VEB = 5 V

−

hFE

DC current gain

IC = 0.1 mA; VCE = 10 V

−

IC = 1 mA; VCE = 10 V

−

IC = 10 mA; VCE = 10 V

−

IC = 10 mA; VCE = 10 V;

Tamb = −55 °C

−

IC = 150 mA; VCE = 10 V

100

300

IC = 150 mA; VCE = 1 V

−

IC = 500 mA; VCE = 10 V

−

VCEsat

collector-emitter saturation voltage

IC = 150 mA; IB = 15 mA; note 1 −

300

IC = 500 mA; IB = 50 mA; note 1 −

VBEsat

base-emitter saturation voltage

IC = 150 mA; IB = 15 mA; note 1 0.6

1.2

IC = 500 mA; IB = 50 mA; note 1 −

collector capacitance

IE = ie = 0; VCB = 10 V;

f = 1 MHz

−

emitter capacitance

IC = ic = 0; VEB = 500 mV;

f = 1 MHz

−

transition frequency

IC = 20 mA; VCE = 20 V;

f = 100 MHz

300

−

MHz

noise figure

IC = 100 µA; VCE = 5 V;

RS = 1 kΩ; f = 1 kHz

−

Switching times (between 10% and 90% levels); (see Fig.2)

ton

turn-on time

ICon = 150 mA; IBon = 15 mA;

IBoff = −15 mA

−

delay time

−

rise time

−

toff

turn-off time

−

250

storage time

−

200

fall time

−

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