DS30120 Rev. 8 - 2

1 of 3

2N7002DW

www.diodes.com

2N7002DW

DUAL N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT TRANSISTOR

Features

•

Dual N-Channel MOSFET

•

Low On-Resistance

•

Low Gate Threshold Voltage

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Ultra-Small Surface Mount Package

•

Lead Free/RoHS Compliant (Note 2)

•

Qualified to AEC-Q101 Standards for High Reliability

Maximum Ratings

°C unless otherwise specified

Characteristic

Symbol

2N7002DW

Units

Drain-Source Voltage

60

V

≤ 1.0MΩ

60

V

Gate-Source Voltage (Note 1)

Continuous

Pulsed

±20

±40

V

Drain Current (Note 1)

Continuous

Continuous @ 100°C

Pulsed

115

73

800

mA

Total Power Dissipation

200

1.60

mW

mW/°C

Thermal Resistance, Junction to Ambient

625

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

A

M

J

L

D

B C

H

K

G

F

D

2

G

1

S

1

S

2

G

2

D

1

Mechanical Data

SOT-363

Dim

Min

Max

A

0.10

0.30

B

1.15

1.35

C

2.00

2.20

D

0.65 Nominal

F

0.30

0.40

H

1.80

2.20

J



0.10

K

0.90

1.00

L

0.25

0.40

M

0.10

0.25

α

0°

8°

All Dimensions in mm

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

S

1

D

1

D

2

S

2

G

1

G

2

•

Case: SOT-363

•

Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020C

•

Terminals: Solderable per MIL-STD-202, Method 208

•

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

•

Terminal Connections: See Diagram

•

Marking (See Page 2): K72

•

Ordering & Date Code Information: See Page 2

•

Weight: 0.006 grams (approx.)

SPICE MODEL: 2N7002DW