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J6 Marking, S9014 Datasheet(PDF) 1 Page - Guangdong Youtai Semiconductor Co., Ltd.

Part # S9014
Description  SOT-23 Plastic-Encapsulate Transistors
PDF  3 Pages
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Manufacturer  UMW [Guangdong Youtai Semiconductor Co., Ltd.]
Direct Link  https://www.umw-ic.com/
Logo UMW - Guangdong Youtai Semiconductor Co., Ltd.

S9014 Datasheet(HTML) 1 Page - Guangdong Youtai Semiconductor Co., Ltd.

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S9014
TRANSISTOR (NPN)
FEATURES
Complementary to S9015
MARKING: J6
MAXIMUM RATINGS (Ta=25
℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
0.1
A
PC
Collector Power Dissipation
0.2
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA, IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 0.1mA, IB=0
45
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=50 V , IE=0
0.1
μA
Collector cut-off current
ICEO
VCE=35V , IB=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 3V , IC=0
0.1
μA
DC current gain
hFE
VCE=5V, IC= 1mA
200
1000
Collector-emitter saturation voltage
VCE(sat)
IC=100 mA, IB= 5mA
0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=100 mA, IB= 5mA
1
V
Transition frequency
fT
VCE=5V, IC= 10mA
f=30MHz
150
MHz
CLASSIFICATION OF hFE
Rank
L
H
Range
200-450
450-1000
SOT-23 Plastic-Encapsulate Transistors
UMW
R
UMW S9014
SOT-23
1.
BASE
2.
EMITTER
3.
COLLECTOR
1
www.umw-ic.com
友台半导体有限公司


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