 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
A1SHB Marking, ADM2301 Datasheet(PDF) 1 Page - Advanced (Shenzhen) Electronics Co.,Ltd |
|
||||||||||||||||||||||||||||||
ADM2301 Datasheet(HTML) 1 Page - Advanced (Shenzhen) Electronics Co.,Ltd |
|
|
1 / 5 page  ADM2301 1 / 5 www.advsemi.com Ver.0.11 ADV P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY Absolute Maximum Ratings ( TA = 25°C unless otherwise specified ) Symbol Parameter Ratings Unit Common Ratings VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ± 10 TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C IS Diode Continuous Forward Current（3） TC =25°C -1.3 A Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴ TC=25°C -10 A ID Continuous Drain Current TC=25°C -3 A PD Maximum Power Dissipation（3） 1.0 W 1. Pulse width limited by maximum junction temperature. Thermal Characteristics Symbol Parameter Ratings Unit RthJA Thermal resistance junction-ambient max（3） 125 °C/W VDSS ID RDS(ON) (mΩ) -20V -3A 83mΩ SOT-23 |
Similar Description - ADM2301 |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
