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STAD-JAN.09.2007

2N7002DW

FEATURES

• R

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• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Specially Designed for Battery Operated Systems, Solid-State Relays

Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.

• Component are in compliance with EU RoHS 2002/95/EC directives

MECHANICALDATA

• Case: SOT-363 Package

• Terminals : Solderable per MIL-STD-750,Method 2026

• Marking : 702

60V N-Channel Enhancement Mode MOSFET

Maximum RATINGS and Thermal Characteristics (T

Note: 1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 10 sec

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

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