Y2 Marking, SS8550 datasheet(2/4 Pages) BILIN

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BL Galaxy Electrical

Production specification

Silicon Epitaxial Planar Transistor

SS8550

Document number: BL/SSSTC087

www.galaxycn.com

Rev.A

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-100μA,IE=0

-40

Collector-emitter breakdown voltage V(BR)CEO

IC=-0.1mA,IB=0

-25

Emitter-base breakdown voltage

V(BR)EBO

IE=-100μA,IC=0

-5

Collector cut-off current

ICBO

VCB=-40V,IE=0

-0.1

μA

Collector cut-off current

ICEO

VCE=-20V,IB=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1

μA

VCE=-1V,IC=-100mA

120

400

DC current gain

hFE

VCE=-1V,IC=-800mA

Collector-emitter saturation voltage

VCE(sat)

IC=-800mA, IB= -80mA

-0.5

Base-emitter saturation voltage

VBE(sat)

IC=-800mA, IB= -80mA

-1.2

Transition frequency

VCE=-10V, IC= -50mA

f=30MHz

100

MHz

Output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

Base-emitter voltage

VBEF

IE=-1.5A

-1.6

CLASSIFICATION

hFE(1)

Rank

Range

120-200

200-350

300-400

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