2A Marking, MMBT3906 datasheet(2/4 Pages) TAITRON

2 / 4 page

Rev. A/AH 2008-05-06

MMBT3906

SMD General Purpose Transistor (PNP)

www.taitroncomponents.com

Page 2 of 4

Electrical Characteristics (T

Ambient=25ºC unless noted otherwise)

MMBT3906

Symbol

Description

Min.

Max.

Unit

Conditions

-VCE=1V, -IC=0.1mA

-VCE=1V, -IC=1mA

100

300

-VCE=1V, -IC=10mA

-VCE=1V, -IC=50mA

hFE*

D.C. Current Gain

-VCE=1V, -IC=100mA

-V(BR)CBO

Collector-Base Breakdown Voltage

-IC=10µA, IE=0

-V(BR)CEO* Collector-Emitter Breakdown Voltage

-IC=1mA, IB=0

-V(BR)EBO* Emitter-Base Breakdown Voltage

5.0

-IE=10µA, IC=0

0.25

-IC=10mA, -IB=1mA

-VCE(sat)*

Collector-Emitter Saturation Voltage

0.4

-IC=50mA, -IB=5mA

0.65

0.85

-IC=10mA, -IB=1mA

-VBE(sat)*

Base-Emitter Saturation Voltage

0.95

-IC=50mA, -IB=5mA

-ICEV

Collector-Emitter Cut-off Current

-VEB=3V, -VCE=30V

-IEBV

Emitter-Base Cut-off Current

-VEB=3V, -VCE=30V

Current Gain-Bandwidth Product

250

MHz

-VCE=20V, -IC=10mA,

f=100MHz

CCBO

Collector-Base Capacitance

4.5

-VCB=5V, IE=0,

f=100KHz

CEBO

Emitter-Base Capacitance

-VEB=0.5V, IC=0

f=100KHz

Noise Figure

4.0

-VCE=5V, -IC=100µA,

RG=1KΩ,

f=10Hz to 15.7kHz

hfe

Small Signal Current Gain

100

400

-VCE=10V, -IC=1mA

f=1KHz

Delay Time (see Fig 1)

-IB1=1mA, -IC=10mA

Rise Time (see Fig 1)

-IB1=1mA, -IC=10mA

Storage Time (see Fig 2)

225

IB1=-IB2=1mA, -IC=10mA

Fall Time (see Fig 2)

IB1=-IB2=1mA, -IC=10mA

Note: *Pulse Test: Pulse Width≤ 300µs, Duty Cycle ≤2.0%

2A Marking, MMBT3906 Datasheet(PDF) 2 Page - TAITRON Components Incorporated

MMBT3906 Datasheet(HTML) 2 Page - TAITRON Components Incorporated

Html Pages

1 2 3 4

Datasheet Download

Link URL