BAV99WT1 BAV99RWT1

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage (I(BR) = 100 µA)

V(BR)

70

—

Vdc

Reverse Voltage Leakage Current (VR = 70 Vdc)

(VR = 25 Vdc, TJ = 150°C)

(VR = 70 Vdc, TJ = 150°C)

IR

—

—

—

2.5

30

50

mAdc

Diode Capacitance

(VR = 0, f = 1.0 MHz)

CD

—

1.5

pF

Forward Voltage

(IF = 1.0 mAdc)

(IF = 10 mAdc)

(IF = 50 mAdc)

(IF = 150 mAdc)

VF

—

—

—

—

715

855

1000

1250

mVdc

Reverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100 W

trr

—

6.0

ns

Forward Recovery Voltage (IF = 10 mA, tr = 20 ns)

VFR

—

1.75

V

Notes: 1. A 2.0 k

Ω variable resistor adjusted for a Forward Current (IF) of 10 mA.

+10 V

2 k

820

Ω

0.1

µF

DUT

VR

100

µH

0.1

µF

50

Ω OUTPUT

PULSE

GENERATOR

50

Ω INPUT

SAMPLING

OSCILLOSCOPE

tr

tp

t

10%

90%

IF

IR

trr

t

iR(REC) = 1 mA

OUTPUT PULSE

(IF = IR = 10 mA; measured

at iR(REC) = 1 mA)

IF

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit