702 Marking, 2N7002 datasheet(1/1 Pages) ZETEX

Part #	2N7002

Description	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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Manufacturer	ZETEX [Zetex Semiconductors]

Direct Link	http://www.diodes.com/

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SOT23 N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 3 – JANUARY 1996

FEATURES

*

60 Volt V

CEO

PARTMARKING DETAIL – 702

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Drain-Source Voltage

VDS

60

V

Continuous Drain Current at Tamb=25°C

ID

115

mA

Pulsed Drain Current

IDM

800

mA

Gate-Source Voltage

VGS

± 40

V

Power Dissipation at Tamb=25°C

Ptot

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

MAX.

UNIT CONDITIONS.

Drain-Source Breakdown

Voltage

BVDSS

60

V

ID=10µA, VGS=0V

Gate-Source Threshold

Voltage

VGS(th)

12.5

V

ID=250mA, VDS= VGS

Gate-Body Leakage

IGSS

10

nA

VGS=± 20V, VDS=0V

Zero Gate Voltage Drain

Current

IDSS

1

500

µA

VDS=48V, VGS=0V

VDS=48V, VGS=0V, T=125°C(2)

On-State Drain Current(1)

ID(on)

500

mA

VDS=25V, VGS=10V

Static Drain-Source On-State

Voltage (1)

VDS(on)

3.75

375

V

mV

VGS=10V, ID=500mA

VGS=5V, ID=50mA

Static Drain-Source On-State

Resistance (1)

RDS(on)

7.5

Ω

VGS=10V, ID=500mA

VGS=5V, ID=50mA

Forward Transconductance

(1)(2)

gfs

80

mS

VDS=25V, ID=500mA

Input Capacitance (2)

Ciss

50

pF

Common Source Output

Capacitance (2)

Coss

25

pF

VDS=25V, VGS=0V, f=1MHz

Reverse Transfer Capacitance

(2)

Crss

5pF

Turn-On Time (2)(3)

t(on)

20

ns

VDD ≈30V, ID=200mA

Rg=25Ω, RL=150Ω

Turn-Off Time (2)(3)

t(off)

20

ns

(1) Measured under pulsed conditions. Width=300

µs. Duty cycle ≤2% (2) Sample test.

(3) Switching times measured with 50

Ω source impedance and <5ns rise time on a pulse generator

Spice parameter data is available upon request for this device

2N7002

D

G

S

SOT23

3 - 2

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