SL Marking, 1N5819HW datasheet(2/5 Pages) DIODES

2 / 5 page

1N5819HW

Document number: DS30217 Rev. 16 - 2

2 of 5

www.diodes.com

June 2014

1N5819HW

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitance load, derate current by 20%.

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

@ IR = 1.0mA

DC Blocking Voltage

VRRM

VRWM

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current

@ TL = +90°CIO

1.0

Repetitive Peak Forward Current

tp ≤ 1ms, δ ≤ 0.5

IFRM

1.5

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

IFSM

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

450

Typical Thermal Resistance Junction to Ambient (Note 5)

RθJA

222

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-65 to +125

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 3)

V(BR)R

⎯

IR = 1.0mA

Forward Voltage

⎯

0.320

0.450

0.750

IF = 0.1A

IF = 1.0A

IF = 3.0A

Reverse Leakage Current (Note 6)

⎯

1.5

1.0

µA

VR = 40V, TA = +25°C

VR = 40V, TA = +100°C

VR = 4V, TA = +25°C

VR = 4V, TA = +100°C

VR = 6V, TA = +25°C

VR = 6V, TA = +100°C

Total Capacitance

⎯

VR = 4V, f = 1.0MHz

Notes:

5. Device mounted on FR-4 PC Board, 2"x2", 2 oz. Copper, single sided, Cathode pad dimensions 0.75"x1.0", Anode pad dimensions 0.25"x1.0".

6. Short duration pulse test used to minimize self-heating effect.

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