D

S30120 Rev. 2P-1

1 of 3

2N7002DW

2N7002DW

DUAL N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT TRANSISTOR

Features

·

Dual N-Channel MOSFET

·

Low On-Resistance

·

Low Gate Threshold Voltage

·

Low Input Capacitance

·

Fast Switching Speed

·

Low Input/Output Leakage

·

Ultra-Small Surface Mount Package

Maximum Ratings

°C unless otherwise specified

Characteristic

Symbol

2N7002DW

Units

Drain-Source Voltage

60

V

£ 1.0MW

60

V

Gate-Source Voltage (Note 1)

Continuous

Pulsed

±20

±40

V

Drain Current (Note 1)

Continuous

Continuous @ 100°C

Pulsed

115

73

800

mA

Total Power Dissipation

200

1.60

mW

mW/°C

Thermal Resistance, Junction to Ambient

625

K/W

Operating and Storage Temperature Range

-55 to +150

°C

Note: 1. Valid provided that terminals are kept at specified ambient temperature.

2. Pulse width

£ 300ms, duty cycle £ 2%.

A

M

J

L

F

D

B C

H

K

KXX

Mechanical Data

·

Case: SOT-363, Molded Plastic

·

Terminals: Solderable per MIL-STD-202,

Method 208

·

Terminal Connections: See Diagram

·

Marking: K72

·

Weight: 0.006 grams (approx.)

SOT-363

Dim

Min

Max

A

0.10

0.30

B

1.15

1.35

C

2.00

2.20

D

0.65 Nominal

F

0.30

0.40

H

1.80

2.20

J

¾

0.10

K

0.90

1.00

L

0.25

0.40

M

0.10

0.25

All Dimensions in mm