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TK18A30D Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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TK18A30D Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 iscN-Channel MOSFET Transistor TK18A30D，ITK18A30D · FEATURES · Low drain-source on-resistance: RDS(ON) = 0.1Ω (typ.) · Enhancement mode: Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · Switching Voltage Regulators · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 300 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 18 A IDM Drain Current-Single Pulsed 72 A PD Total Dissipation @TC=25℃ 45 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 2.78 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 62.5 ℃ /W |
Similar Part No. - TK18A30D |
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