TSM2NB65

Taiwan Semiconductor

1

Version:B1706

N-Channel Power MOSFET

650V, 2.0A, 5

Ω

FEATURES

● 100% UIS & R

● Pb-free plating

● Compliant to RoHS Directive 2011/65/EU and in

accordance to WEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

APPLICATION

● Power Supply

● AC/DC LED Lighting

KEY PERFORMANCE PARAMETERS

PARAMETER

VALUE

UNIT

650

V

5

Ω

13

nC

TO-251 (IPAK SL)

TO-252 (DPAK)

Notes: MSL 3 (Moisture Sensitivity Level) for TO-252 (D-PAK) per J-STD-020

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

650

V

Gate-Source Voltage

±20

V

Continuous Drain Current

2.0

A

1.4

Pulsed Drain Current

(Note 1)

8.0

A

65

W

Single Pulsed Avalanche Energy

(Note 2)

25

mJ

Single Pulsed Avalanche Current

(Note 2)

1.6

A

Operating Junction and Storage Temperature Range

- 55 to +150

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Junction to Case Thermal Resistance

1.9

°C/W

Junction to Ambient Thermal Resistance

62.5

°C/W