TSM60NB190CF datasheet(2/6 Pages) TSC

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TSM60NB190CF

Taiwan Semiconductor

Version: A1612

ELECTRICAL SPECIFICATIONS (T

A = 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

BVDSS

600

Gate Threshold Voltage

VDS = VGS, ID = 250µA

VGS(TH)

3.2

Gate Body Leakage

VGS = ±30V, VDS = 0V

IGSS

±100

Zero Gate Voltage Drain Current

VDS = 600V, VGS = 0V

IDSS

µA

Drain-Source On-State Resistance

(Note 4)

VGS = 10V, ID = 3.7A

RDS(on)

0.17

0.19

Dynamic

(Note 5)

Total Gate Charge

VDS = 480V, ID = 11A,

VGS = 10V

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Input Capacitance

VDS = 100V, VGS = 0V,

f = 1.0MHz

Ciss

1311

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Gate Resistance

f = 1.0MHz

Switching

(Note 6)

Turn-On Delay Time

VDD = 300V,

RGEN = 5Ω,

ID = 11A, VGS = 10V,

td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Source-Drain Diode

Body-Diode Continuous Forward Current

Body-Diode Pulsed Current

ISM

Forward Voltage

(Note 4)

IS = 11A, VGS = 0V

VSD

1.4

Reverse Recovery Time

IS = 11A

dIF/dt = 100A/μs

trr

288

Reverse Recovery Charge

Qrr

4.1

μC

Notes:

Current limited by package.

Pulse width limited by the maximum junction temperature.

L = 50mH, IAS = 4.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25

Pulse test: PW

≤ 300µs, duty cycle ≤ 2%.

For DESIGN AID ONLY, not subject to production testing.

Switching time is essentially independent of operating temperature.

ORDERING INFORMATION

PART NO.

PACKAGE

PACKING

TSM60NB190CF C0G

ITO-220S

50pcs / Tube

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