RN2407~RN2409

2001-06-07

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2407,RN2408,RN2409

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN1407~1409

Equivalent Circuit

°°°°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

−50

V

Collector-emitter voltage

RN2407~RN2409

−50

V

RN2407

−6

RN2408

−7

Emitter-base voltage

RN2409

−15

V

Collector current

−100

mA

Collector power dissipation

200

mW

Junction temperature

150

°C

Storage temperature range

RN2407~RN2409

−5~150

°C

JEDEC

TO-236MOD

EIAJ

SC-59

TOSHIBA

2-3F1A

Weight: 0.012g

Unit: mm