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M57962 Datasheet(PDF) 2 Page - Powerex Power Semiconductors |
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M57962 Datasheet(HTML) 2 Page - Powerex Power Semiconductors |
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2 / 2 page ![]() 152 M57962L Hybrid IC for IGBT Gate Driver Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Ta ~ 20°C to 70°C unless otherwise specified Item Symbol Test Conditions Limit Units Supply Voltage* VCC DC 18 Volts VEE DC -15 Volts Input Voltage VI -1 ~ 7 Volts Output Voltage VO Output Voltage “H” VCC Volts Output Current IOHP Pulse Width 2 µs, f = 20kHz -5 Amperes IOLP Pulse Width 2 µs, f = 20kHz 5 Amperes Output Current IOH f = 20kHz, 50% Duty Cycle 0.5 Amperes Isolation Voltage VRMS Sinewave Voltage 60kHz, 1 min. 2500 Volts Junction Temperature Tj 85 °C Operating Temperature Topg (Differs from H/C Condition) -20 ~ 60 °C Storage Temperature tstg -25 ~ 100 °C Fault Output Current IFO 20 mA Input Voltage VR1 50 Volts *20 Volts ≤ VCC + VEE ≤ 28 Volts Electrical Characteristics, Ta = 25°C, VCC = 15V, -VEE = 10V unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Supply Voltage VCC Recommended Range 14 15 — Volts VEE Recommended Range -7 — -10 Volts Pull-up Voltage on Input Side VIN Recommended Range 4.75 5.00 5.25 Volts “H” Input Current IIH VIN = 5V, R = 185Ω —16 — mA “H” Output Voltage VOH 13 14 — Volts “L” Output Voltage VOL -8 -9 — Volts Internal Power Dissipation PD f = 20kHz, — 2.38 — Watts Module 400A, 1200V IGBT “L-H” Propagation Time tPLH VI = 0 to 4V, Tj ± 85°C — 1.0 1.5 µs “L-H” Rise Time tr VI = 0 to 4V, Tj ± 85°C — 0.6 1.0 µs “H-L” Propagation Time tPHL VI = 0 to 4V, Tj ± 85°C — 1.0 1.5 µs “H-L” Rise Time tr VI = 0 to 4V, Tj ± 85°C — 0.4 1.0 µs Reset Time of Protection tRESET 1— 2 ms Fault Output Current IFO —5 — mA SC Voltage VSC 15 — — Volts |
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