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DMN5L06DWK Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMN5L06DWK
Description  DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  6 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN5L06DWK Datasheet(HTML) 2 Page - Diodes Incorporated

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DMN5L06DWK
Document number: DS30930 Rev. 7 - 2
2 of 6
www.diodes.com
March 2017
© Diodes Incorporated
DMN5L06DWK
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain Source Voltage
VDSS
50
V
Gate-Source Voltage
VGSS
20
V
Drain Current
Continuous
Pulsed (Note 6)
ID
305
800
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
250
mW
Thermal Resistance, Junction to Ambient
RθJA
500
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
50
V
VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current
@ TC = +25°C
IDSS
60
nA
VDS = 50V, VGS = 0V
Gate-Body Leakage
IGSS
1
500
50
µA
nA
nA
VGS = ±12V, VDS = 0V
VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
0.49
1.0
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)




3.0
2.5
2.0
Ω
VGS = 1.8V, ID = 50mA
VGS = 2.5V, ID = 50mA
VGS = 5.0V, ID = 50mA
On-State Drain Current
ID(ON)
0.5
1.4
A
VGS = 10V, VDS = 7.5V
Forward Transconductance
|YFS|
200
mS
VDS =10V, ID = 0.2A
Source-Drain Diode Forward Voltage
VSD
0.5
1.4
V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
CISS
50
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
COSS
25
pF
Reverse Transfer Capacitance
CRSS
5.0
pF
Gate Resistance
RG

65
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
QG

0.4
nC
VGS = 4.5V VDS = 10V,
ID = 0.25A
Gate-Source Charge
QGS

0.1
nC
Gate-Drain Charge
QGD

0.1
nC
Turn-On Delay Time
tD(ON)

2.1
ns
VDD = 30V, VGS = 10V,
RG = 25Ω, ID = 0.2A
Turn-On Rise Time
tR

1.8
ns
Turn-Off Delay Time
tD(OFF)

14.4
ns
Turn-Off Fall Time
tF

8.4
ns
Notes:
5. Device mounted on FR-4 PCB.
6. Pulse width
10µS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.



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