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IRLR7807Z Datasheet(PDF) 1 Page - International Rectifier |
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IRLR7807Z Datasheet(HTML) 1 Page - International Rectifier |
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1 / 11 page ![]() www.irf.com 1 4/7/03 IRLR7807Z IRLU7807Z HEXFET® Power MOSFET Notes through are on page 11 Applications Benefits Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current High Frequency Synchronous Buck Converters for Computer Processor Power D-Pak IRLR7807Z I-Pak IRLU7807Z PD - 94662 VDSS RDS(on) max Qg (typ.) 30V 13.8m Ω 7.0nC Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation W PD @TC = 100°C Maximum Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 3.75 RθJA Junction-to-Ambient (PCB Mount) ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 40 Max. 43 30 170 ± 20 30 0.27 20 300 (1.6mm from case) -55 to + 175 |
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