EMF21 / UMF21N

Transistors

2/4

Absolute maximum ratings (Ta=25

°C)

Tr1

Parameter

∗2 120mW per element must not be exceeded.

Each terminal mounted on a recommended land.

Symbol

Tj

Tstg

Limits

−15

−12

−6

−500

150(TOTAL)

150

−55~+150

−1.0

∗1

∗2

Unit

V

V

V

mA

A

mW

°C

°C

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

DTr2

Parameter

∗1 Characteristics of built-in transistor.

∗2 Each terminal mounted on a recommended land.

Symbol

Tj

Tstg

Limits

50

−10~+40

100

50

150(TOTAL)

150

−55~+150

∗1

∗2

Unit

V

V

mA

mA

mW

°C

°C

Supply voltage

Input voltage

Collector current

Output current

Power dissipation

Junction temperature

Range of storage temperature

Electrical characteristics (Ta=25

°C)

Tr1

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Transition frequency

−

260

−

MHz

−12

−−

V

=−1mA

Collector-emitter breakdown voltage

−15

−−

V

=−10µA

Collector-base breakdown voltage

−6

−−

V

=−10µA

Emitter-base breakdown voltage

−−

−100

nA

=−15V

Collector cut-off current

−−

−100

nA

=−6V

Emitter cut-off current

−−100

−250

mV

Collector-emitter saturation voltage

270

−

680

−

DC current gain

Cob

−

6.5

−

pF

Collector output capacitance

DTr2

Parameter

Symbol

Min.

−

3

−

−

−

7

30

0.8

−

−

−

0.1

−

−

10

−

1

250

0.5

−

0.3

0.88

0.5

13

−

1.2

−

V

=10mA/0.5mA

=5V

∗

V

mA

µA

k

Ω

−

−−

−

MHz

Typ.

Max.

Unit

Conditions

Input voltage

Output voltage

Input current

Output current

Input resistance

DC current gain

Resistance ratio

Transition frequency

∗ Transition frequency of the device