DMN6069SFG datasheet(2/7 Pages) DIODES

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DMN6069SFG

Document number: DS37821 Rev. 4 - 2

2 of 7

www.diodes.com

November 2016

DMN6069SFG

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6) VGS = 10V

Steady State

TA = +25°C

TA = +70°C

5.6

4.5

Steady State

TC = +25°C

TC = +70°C

14.5

Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)

IDM

Maximum Continuous Body Diode Forward Current (Note 6)

2.5

Avalanche Current (Note 7) L = 0.1mH

IAS

Avalanche Energy (Note 7) L = 0.1mH

EAS

7.2

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

0.93

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

134

°C/W

t<10s

Total Power Dissipation (Note 6)

2.4

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

°C/W

t<10s

Thermal Resistance, Junction to Case

RθJC

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

µA

VDS = 60V, VGS = 0V

Zero Gate Voltage Drain Current TJ = +150°C (Note 9)

IDSS

—

100

µA

VDS = 60V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

—

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

Ω

VGS = 10V, ID = 4.5A

—

VGS = 4.5V, ID = 3A

Diode Forward Voltage

VSD

—

1.1

VGS = 0V, IS = 2.5A

On State Drain Current (Note 9)

ID(ON)

—

VDS ≧5V, VGS = 10V

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

CISS

—

740

1,480

VDS = 30V, VGS = 0V,

f = 1.0MHz

Output Capacitance

COSS

—

Reverse Transfer Capacitance

CRSS

—

Gate Resistance

—

2.2

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

—

6.4

VDS = 30V, ID = 12A

Total Gate Charge (VGS = 10V)

—

Gate-Source Charge

QGS

—

2.8

5.5

Gate-Drain Charge

QGD

—

2.3

Turn-On Delay Time

tD(ON)

—

3.6

VDS = 30V, ID = 12A

VGS = 10V, RG = 6.0Ω

Turn-On Rise Time

—

5.0

Turn-Off Delay Time

tD(OFF)

—

Turn-Off Fall Time

—

3.3

Body Diode Reverse Recovery Time

tRR

—



IF = 4.5A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR

—



5.1



Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.

7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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