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AD7294BCPZ Datasheet(PDF) 44 Page - Analog Devices |
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AD7294BCPZ Datasheet(HTML) 44 Page - Analog Devices |
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44 / 48 page ![]() Data Sheet AD7294 Rev. I | Page 43 of 47 APPLICATIONS INFORMATION The AD7294 contains all the functions required for general- purpose monitoring and control of current, voltage, and temperature. With its 59.4 V maximum common-mode range, the device is useful in industrial and automotive applications where current sensing in the presence of a high common-mode voltage is required. For example, the device is ideally suited for monitoring and controlling a power amplifier in a cellular base station. BASE STATION POWER AMPLIFIER MONITOR AND CONTROL The AD7294 is used in a power amplifier signal chain to achieve the optimal bias condition for the LDMOS transistor. The main factors influencing the bias conditions are tempera- ture, supply voltage, gate voltage drift, and general processing parameters. The overall performance of a power amplifier configuration is determined by the inherent tradeoffs required in efficiency, gain, and linearity. The high level of integration offered by the AD7294 allows the use of a single chip to dynamically control the drain bias current to maintain a constant value over temperature and time, thus significantly improving the overall performance of the power amplifier. The AD7294 incorporates the functionality of eight discrete components bringing considerable board area savings over alternative solutions. The circuit in Figure 59 is a typical system connection diagram for the AD7294. The device monitors and controls the overall performance of two final stage amplifiers. The gain control and phase adjustment of the driver stage are incorporated in the application and are carried out by the two available uncommitted outputs of the AD7294. Both high-side current senses measure the amount of current on the respective final stage amplifiers. The comparator outputs, ISENSE1 OVERRANGE and ISENSE2 OVERRANGE pins, are the controlling signals for switches on the RF inputs of the LDMOS power FETs. If the high-side current sense reads a value above a specified limit compared with the setpoint, the RF IN signal is switched off by the comparator. By measuring the transmitted power (Tx) and the received power (Rx), the device can dynamically change the drivers and PA signal to optimize performance. This application requires a logarithmic detector/controller, such as Analog Devices AD8317 or AD8362. MUX TEMP SENSOR HIGH SIDE CURRENT SENSE HIGH SIDE CURRENT SENSE T1 T2 VOUTA VOUTB VOUTC FILTER FILTER RF CHOKE RF OUT LDMOS RS1(+) RS2(+) RS2(–) RS1(–) RS2(–) D1+ D2+ D2– D1– SET-POINT 240mV ISENSE1 OVERRANGE ISENSE2 OVERRANGE GAIN CONTROL RSENSE RSENSE VDD LDMOS RF OUT 12-BIT ADC VIN0 VIN1 VIN2 VIN3 12-BIT DAC 12-BIT DAC 12-BIT DAC 12-BIT DAC VOUTD GAIN CONTROL RF CHOKE Tx POWER MONITOR Rx POWER MONITOR Tx POWER RF CUTOFF Rx POWER AD7294* RF IN RF IN *ADDITIONAL PINS OMITTED FOR CLARITY. REF REF Figure 59. Typical HPA Monitor and Control Application |
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