DMN601TK

Document number: DS30654 Rev. 8 - 2

2 of 6

www.diodes.com

July 2017

© Diodes Incorporated

DMN601TK

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

Drain Current (Note 5)

Continuous

Pulsed (Note 6)

300

800

mA

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

150

mW

Thermal Resistance, Junction to Ambient

833

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

60





V

Zero Gate Voltage Drain Current





1.0

µA

Gate-Source Leakage





±10

µA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

1.0

1.6

2.5

V

Static Drain-Source On-Resistance







2.0

3.0

Ω

Forward Transfer Admittance

80





ms

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance





50

pF

f = 1.0MHz

Output Capacitance





25

pF

Reverse Transfer Capacitance





5.0

pF

Turn-On Delay Time



3.4





ns

G

Turn-On Rise Time



2.4



ns

Turn-Off Delay Time



11.0



ns

Turn-Off Fall Time



4.9



ns

Notes:

5. Device mounted on FR-4 PCB.

6. Pulse width

10µS, Duty Cycle 1%.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.