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TDA8920BTH Datasheet(PDF) 13 Page - NXP Semiconductors |
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TDA8920BTH Datasheet(HTML) 13 Page - NXP Semiconductors |
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13 / 34 page ![]() 9397 750 13356 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Preliminary data sheet Rev. 01 — 1 October 2004 13 of 34 Philips Semiconductors TDA8920B 2 × 100 W class-D power amplifier [1] The circuit is DC adjusted at VP = ±12.5 V to ±30 V. [2] With respect to SGND (0 V). [3] The transition between Standby and Mute mode contain hysteresis, while the slope of the transition between Mute and Operating mode is determined by the time-constant on the MODE pin; see Figure 7. [4] DC output offset voltage is applied to the output during the transition between Mute and Operating mode in a gradual way. The slope of the dV/dt caused by any DC output offset is determined by the time-constant on the MODE pin. 12. Dynamic characteristics 12.1 Switching characteristics Temperature protection Tprot temperature protection activation - 150 - °C Thys hysteresis on temperature protection - 20 - °C Table 7: Static characteristics …continued VP = ±27 V; fosc = 317 kHz; Tamb = 25 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Fig 7. Behavior of mode selection pin MODE. STBY MUTE ON 5.5 coa021 VMODE (V) 4.2 3.0 2.2 0.8 0 VO (V) Voo (mute) Voo (on) slope is directly related to time-constant on the MODE pin Table 8: Switching characteristics VDD = ±27 V; Tamb =25 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Internal oscillator fosc typical internal oscillator frequency ROSC = 30.0 kΩ 290 317 344 kHz fosc(int) internal oscillator frequency range 210 - 600 kHz External oscillator or frequency tracking VOSC high-level voltage on pin OSC SGND + 4.5 SGND + 5 SGND + 6 V VOSC(trip) trip level for tracking on pin OSC - SGND + 2.5 - V ftrack frequency range for tracking 210 - 600 kHz |
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