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HT32F52243 Datasheet(PDF) 32 Page - Holtek Semiconductor Inc |
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HT32F52243 Datasheet(HTML) 32 Page - Holtek Semiconductor Inc |
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32 / 44 page ![]() Rev. 1.00 �� of 44 ��to�e� ��� �01� ��-Bit A�m® Co�tex®-M0+ MCU HT��F5��4�/HT��F5��5� Table 12. Low Speed External Clock (LSE) Characteristics TA = �5 °C, unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit VDD �pe�ation Range — �.0 — �.6 V fCK_LSE LSE F�equen�y VDD = �.0 V ~ �.6 V — ��.�68 — kHz RF Inte�nal Feed�a�k Resisto� — — 10 — MΩ RESR Equivalent Se�ies Resistan�e VDD = �.� V �0 — TBD kΩ CL Re�ommended Load Capa�itan�es VDD = �.� V 6 — TBD pF IDDLSE �s�illato� Supply Cu��ent (High Cu��ent Mode) fCK_LSE = ��.�68 kHz� RESR = 50 kΩ, CL ≥ � pF VDD = �.0 V ~ �.� V TA = -40 °C ~ +85 °C — �.� 6.� μA �s�illato� Supply Cu��ent (Low Cu��ent Mode) fCK_LSE = ��.�68 kHz� RESR = 50 kΩ, CL < � pF VDD = �.0 V ~ �.6 V TA = -40 °C ~ +85 °C — 1.8 �.� μA Powe� Down Cu��ent — — — 0.01 μA tsuLSE Sta�tup Time ( Low Cu��ent Mode) fCK_LSI = ��.�68 kHz� VDD = �.0 V ~ �.6 V 500 — — ms Note: The following guidelines a�e �e�ommended to in��ease the sta�ility of the ��ystal �i��uit of the HSE / LSE �lo�k in the PCB layout: ■ The ��ystal os�illato� should �e lo�ated as �lose as possi�le to the MCU to keep the t�a�e lengths as sho�t as possi�le to �edu�e any pa�asiti� �apa�itan�e. ■ Shield lines in the vi�inity of the ��ystal �y using a g�ound plane to isolate signals and �edu�e noise. ■ Keep any high f�equen�y signal lines away f�om the ��ystal a�ea to p�event any ��osstalk adve�se effe�ts. Internal Clock Characteristics Table 13. High Speed Internal Clock (HSI) Characteristics TA = �5 °C, unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit VDD �pe�ation Range — �.0 — �.6 V fHSI HSI F�equen�y VDD = �.� V @ �5 °C — 8 — MHz ACCHSI Fa�to�y Cali��ated HSI �s�illato� F�equen�y A��u�a�y VDD = �.� V� TA = �5 °C -� — � % VDD = �.5 V ~ �.6 V� TA = -40 °C ~ +85 °C -� — � % VDD = �.0 V ~ �.6 V TA = -40 °C ~ +85 °C -4 — 4 % Duty Duty Cy�le fHSI = 8 MHz �5 — 65 % IDDHSI �s�illato� Supply Cu��ent fHSI = 8 MHz — �00 500 μA Powe� Down Cu��ent — — 0.05 μA tsuHSI Sta�tup Tme fHSI = 8 MHz — — 10 μs |
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