RN4606

2001-02-08 1/4

TOSHIBA Transistor

Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

RN4606

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l Including two devices in SM6 (super mini type with 6 leads)

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

Equivalent Circuit and Bias Resister Values

R1: 4.7kΩ

R2: 47kΩ

(Q1, Q2 Common)

°°°°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

−50

V

Collector-emitter voltage

−50

V

Emitter-base voltage

−5

V

Collector current

−100

mA

°°°°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

50

V

Emitter-base voltage

5

V

Collector current

100

mA

JEDEC

―

EIAJ

―

TOSHIBA

2-3N1A

Weight: 0.015g

Unit in mm

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can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the

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to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or

damage to property.

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000707EAA2