KF5N53FS datasheet(1/6 Pages) KEC

Part #	KF5N53FS

Description	N CHANNEL MOS FIELD EFFECT TRANSISTOR

PDF	6 Pages

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Manufacturer	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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2012. 3. 29

1/6

SEMICONDUCTOR

TECHNICAL DATA

KF5N53FS

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 0

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, fast reverse recovery time, low on resistance, low gate

charge and excellent avalanche characteristics. It is mainly suitable for

electronic ballast and switching mode power supplies.

FEATURES

・VDSS= 525V, ID= 5.0A

・Drain-Source ON Resistance : RDS(ON)=1.5Ω @VGS = 10V

・Qg(typ) = 12nC

・trr(typ) = 150ns

MAXIMUM RATING (Tc=25

℃)

* : Drain current limited by maximum junction temperature.

CHARACTERISTIC

SYMBOL

RATING

UNIT

Drain-Source Voltage

VDSS

525

V

Gate-Source Voltage

VGSS

±30

V

Drain Current

@TC=25℃

ID

5.0*

A

@TC=100℃

2.9*

Pulsed (Note1)

IDP

13*

Single Pulsed Avalanche Energy

(Note 2)

EAS

270

mJ

Repetitive Avalanche Energy

(Note 1)

EAR

8.6

mJ

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

20

V/ns

Drain Power

Dissipation

Tc=25

℃

PD

37.9

W

Derate above 25

℃

0.30

W/

℃

Maximum Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55

～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

RthJC

3.3

℃/W

Thermal Resistance, Junction-to-

Ambient

RthJA

62.5

℃/W

PIN CONNECTION

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