SFH4775S datasheet(2/13 Pages) OSRAM

2 / 13 page

2018-02-05

Preliminary – For Reference only.

Subject to change.

Preliminary Version 0.0

SFH 4775S

Maximum Ratings (TA = 25 °C)

Characteristics (TA = 25 °C)

Parameter

Symbol

Values

Unit

Operating temperature range

-40 ... 100

°C

Storage temperature range

stg

-40 ... 100

°C

Junction temperature

145

°C

Forward current

1500

Surge current

(tp ≤ 1.5 ms, D = 0.005)

FSM

Power consumption

Ptot

5800

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

VESD

Thermal resistance junction - solder point

RthJS

K / W

Note:

For the forward current and power consumption please see "maximum permissible forward current" diagram

Parameter

Symbol

Values

Unit

Peak wavelength

(IF = 1 A, tp = 10 ms)

(typ)

λpeak

950

Centroid wavelength

F = 1 A, tp = 10 ms)

(typ)

λcentroid

940

Spectral bandwidth at 50% of I

max

F = 1 A, tp = 10 ms)

(typ)

∆λ

Half angle

(typ)

± 60

Dimensions of active chip area

(typ)

L x W

1 x 1

mm x

Rise and fall times of Ie ( 10% and 90% of Ie max)

(IF = 3 A, RL = 50 Ω)

(typ)

tr / tf

11 / 14

Forward voltage

F = 1 A, tp = 10 ms)

(typ (max)) V

2.8 (≤ 3.6)

Forward voltage

F = 1.5 A, tp = 100 µs)

(typ (max)) V

2.95 (≤ 3.85)

Forward voltage

(IF = 3 A, tp = 100 µs)

(typ )

3.3 (≤ 4.7)

Reverse current

(VR = 5 V)

not designed for

reverse operation

µA

Radiant intensity

F = 1 A, tp = 10 ms)

e, typ

360

mW/sr

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