SFH4770S datasheet(2/13 Pages) OSRAM

2 / 13 page

2016-03-01

Version 1.3

SFH 4770S

Maximum Ratings (TA = 25 °C)

Characteristics (T

A = 25 °C)

Parameter

Symbol

Values

Unit

Operation and storage temperature range

op; Tstg

-40 ... 100

°C

Junction temperature

145

°C

Forward current

1500

Surge current

p ≤ 200 µs, D = 0)

FSM

Power consumption

Ptot

5800

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

VESD

Thermal resistance junction - solder point

RthJS

K / W

Note:

For the forward current and power consumption please see "maximum permissible forward current" diagram

Parameter

Symbol

Values

Unit

Peak wavelength

(IF = 1 A, tp = 10 ms)

(typ)

λpeak

860

Centroid wavelength

(IF = 1 A, tp = 10 ms)

(typ)

λcentroid

850

Spectral bandwidth at 50% of I

max

F = 1 A, tp = 10 ms)

(typ)

∆λ

Half angle

(typ)

± 60

Dimensions of active chip area

(typ)

L x W

1 x 1

mm x

Rise and fall times of Ie ( 10% and 90% of Ie max)

(IF = 3 A, RL = 50 Ω)

(typ)

tr / tf

11 / 14

Forward voltage

F = 1 A, tp = 10 ms)

(typ (max)) VF

3.2 (≤ 3.6)

Forward voltage

F = 1.5 A, tp = 100 µs)

(typ (max)) V

3.35 (≤ 3.85)

Forward voltage

(IF = 3 A, tp = 100 µs)

(typ (max)) V

3.8 (≤ 4.7)

Reverse current

(VR = 5 V)

not designed for

reverse operation

µA

Radiant intensity

F = 1 A, tp = 10 ms)

Ie, typ

370

mW/sr

Radiant intensity

F = 1.5 A, tp = 100 µs)

e, typ

560

mW/sr

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