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AP50WN520P Datasheet(PDF) 4 Page - Advanced Power Electronics Corp.

Part # AP50WN520P
Description  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  5 Pages
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP50WN520P Datasheet(HTML) 4 Page - Advanced Power Electronics Corp.

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AP50WN520P
0.37Ω
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
Fig 11. Total Power Dissipation
Fig 12. Normalized BVDSS v.s. Junction
Temperature
4
0
800
1600
2400
3200
0
100
200
300
400
500
600
V DS , Drain-to-Source Voltage (V)
f=1.0MHz
C iss
C oss
C rss
0
2
4
6
8
10
12
0
1020304050
Q G , Total Gate Charge (nC)
I D =12A
V DS =400V
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
T C =25
o C
Single Pulse
10us
100us
1ms
10ms
DC
0
40
80
120
160
0
50
100
150
T C , Case Temperature (
o C )
Operation in this area
limited by RDS(ON)
0
0.4
0.8
1.2
1.6
2
-100
-50
0
50
100
150
T j , Junction Temperature (
o C)
I D =1mA
.



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