TPC8210 datasheet(3/7 Pages) TOSHIBA

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TPC8210

2003-02-18

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

—

―

±10

µA

Drain cut−OFF current

IDSS

VDS = 30 V, VGS = 0 V

―

µA

V (BR) DSS

ID = 10 mA, VGS = 0 V

―

Drain−source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = -20 V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

1.3

―

2.5

RDS (ON)

VGS = 4.5 V, ID = 4 A

Drain−source ON resistance

RDS (ON)

VGS = 10 V, ID = 4 A

―

mΩ

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 4 A

6.5

―

Input capacitance

Ciss

―

3530

―

Reverse transfer capacitance

Crss

―

495

―

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

―

580

―

Rise time

―

Turn−ON time

ton

―

Fall time

―

Switching time

Turn−OFF time

toff

Duty <= 1%, tw = 10 ms

―

115

―

Total gate charge (Gate−source

plus gate−drain)

―

Gate−source charge

Qgs

―

Gate−drain (“miller”) charge

Qgd

VDD ≈ 24 V, VGS = 10 V, ID = 8 A

―

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse

current

Pulse (Note 1)

IDRP

—

Forward voltage (diode)

VDSF

IDR = 8 A, VGS = 0 V

—

−1.2

VDD ~- 15 V

0 V

VGS

10 V

ID = 4 A

VOUT

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