California Micro Devices

430 N.McCarthy Blvd

Milpitas, CA 95035

PRELIMINARY

11/18/03

Tel: (408) 263-3214

2

Figure 1. Dimensions of CSPEMI607.

Schematic Diagram

Pin Number

Pin Description

Pin Number

Pin Description

A1

ESD Channel #1

B3

GND

A2

Filter #1

C1

ESD Channel #3

A3

Filter #2

C2

Filter #1

A4

Filter #3

C3

Filter #2

A5

Filter #4

C4

Filter #3

A6

ESD Channel #2

C5

Filter #4

B1

GND

C6

ESD Channel #4

B2

GND

Specifications:

(At 25

°C unless specified otherwise)

Min.

Typ.

Max.

Unit

Resistance R1

80

100

120

Ω

Capacitance C1 at 2.5V dc; 1MHz, 30mV ac

12

15

18

pF

Stand-off Voltage, I = 10µA

5.5

V

Diode Leakage at +/-3.3V reverse bias voltage

100

nA

Signal Clamp Voltage:

Positive Clamp, 10mA

Negative Clamp, -10mA

5.6

-1.5

6.8

-0.8

9.0

-0.4

V

V

In-system ESD withstand voltage*:

Human Body Model (MIL-STD-883, method 3015)

IEC 61000-4-2, contact discharge method

±30

±15

kV

kV

Clamping voltage during ESD discharge*

Positive

MIL-STD-883 (Method 3015), 8kV

Negative

12

-7

V

V

Temperature Range:

Operating

Storage

-40

-65

85

150

°C

DC Power per Resistor:

0.1

W

DC Package Power Rating:

0.5

W

* ESD applied to input / output pins with respect to GND, one at a time. Clamping voltage is

measured at the opposite side of the EMI filter to the ESD pin (i.e. if ESD is applied to pin A1

then clamping voltage is measured at pin C1). Unused pins are left open. These parameters

are guaranteed by design.