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TPS25221DBVT Datasheet(PDF) 13 Page - Texas Instruments |
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TPS25221DBVT Datasheet(HTML) 13 Page - Texas Instruments |
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13 / 27 page ![]() 13 TPS25221 www.ti.com SLVSDT3 – JANUARY 2018 Product Folder Links: TPS25221 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated 10 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 10.1 Application Information 10.1.1 Constant-Current The TPS25221 operates identically during normal operation, that is, the load current is less than the current-limit threshold and the devices are not limiting current. During normal operation, The TPS25221 load current is less than the current-limit threshold and the devices are not limiting current. During normal operation the N-channel MOSFET is fully enhanced, and VOUT = VIN - (IOUT x rDS(on)). The voltage drop across the MOSFET is relatively small compared to VIN, and VOUT ≉ VIN. The TPS25221 operates identically during the initial onset of an overcurrent event. The TPS25221 limits current to the programmed current-limit threshold set to RILIM by operating the N-channel MOSFET in the linear mode. During current-limit operation, the N-channel MOSFET is no longer fully-enhanced and the resistance of the device increases. This allows the device to effectively regulate the current to the current-limit threshold. The effect of increasing the resistance of the MOSFET is that the voltage drop across the device is no longer negligible (VIN ≠ VOUT), and VOUT decreases. The amount that VOUT decreases is proportional to the magnitude of the overload condition. The expected VOUT can be calculated by: IOS × RLOAD where: IOS is the current-limit threshold and RLOAD is the magnitude of the overload condition. (2) For example, if IOS is programmed to 1 A and a 1-Ω overload condition is applied, the resulting VOUT is 1 V. The TPS25221 operates identically during the initial onset of an overcurrent event, it behaves differently if the overcurrent event lasts longer than the internal delay de-glitch circuit (8 ms typical). The TPS25221 asserts the FAULT flag after the deglitch period and continue to regulate the current to the current-limit threshold indefinitely. In practical circuits, the power dissipation in the package increases the die temperature above the thermal shutdown current limit threshold (145°C typical), and the device turns off until the die temperature decreases by the hysteresis of the thermal shutdown circuit (20°C typical). The device turns on and continues to thermal cycle until the overload condition is removed. The constant-current device resumes normal operation once the overload condition is removed. 10.2 Typical Applications 10.2.1 Two-Level Current-Limit Circuit Some applications require different current-limit thresholds depending on external system conditions. Figure 20 shows an implementation for an externally controlled, two-level current-limit circuit. The current-limit threshold is set by the total resistance from ILIM to GND (see the Programming the Current-Limit Threshold section). A logic- level input enables or disables MOSFET Q1 and changes the current-limit threshold by modifying the total resistance from ILIM to GND. Additional MOSFET and resistor combinations can be used in parallel to Q1/R2 to increase the number of additional current-limit levels. NOTE ILIM must never be driven directly with an external signal. |
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