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IRF540 Datasheet(PDF) 4 Page - Vishay Siliconix |
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IRF540 Datasheet(HTML) 4 Page - Vishay Siliconix |
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4 / 9 page ![]() www.vishay.com Document Number: 91021 4 S11-0510-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF540, SiHF540 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 3000 2400 1800 1200 0 600 100 101 VDS, Drain-to-Source Voltage (V) C iss C rss C oss V GS = 0 V, f = 1 MHz C iss = Cgs + Cgd, Cds Shorted C rss = Cgd C oss = Cds + Cgd 91021_05 QG, Total Gate Charge (nC) 20 16 12 8 0 4 040 20 30 10 I D = 17 A V DS = 20 V V DS = 50 V For test circuit see figure 13 V DS = 80 V 91021_06 70 60 50 101 100 VSD, Source-to-Drain Voltage (V) 0.4 1.6 1.2 0.8 25 °C 150 °C V GS = 0 V 91021_07 10-1 10 µs 100 µs 1 ms 10 ms Operation in this area limited by R DS(on) VDS, Drain-to-Source Voltage (V) T C = 25 °C T J = 175 °C Single Pulse 102 0.1 2 5 2 5 1 2 5 10 25 1 25 10 25 102 25 103 25 104 91021_08 103 |
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