AM29SL160C datasheet(51/52 Pages) AMD

51 / 52 page

November 1, 2004

Am29SL160C

REVISION SUMMARY

Revision A (December 1998)

Initial release.

Revision A+1 (January 1999)

Distinctive Characteristics

WP#/ACC pin: In the third subbullet, deleted reference

to increased erase performance.

Device Bus Operations

Accelerated Program and Erase Operations: Deleted

all references to accelerated erase.

Sector/Sector Block Protection and Unprotection:

Changed section name and text to include tables and

references to sector block protection and unprotection.

AC Characteristics

Accelerated Program Timing Diagram: Deleted refer-

ence in title to accelerated erase.

Revision A+2 (March 23, 1999)

Connection Diagrams

Corrected the TSOP pinout on pins 13 and 14.

Revision A+3 (April 12, 1999)

Global

Modified the description of accelerated programming to

emphasize that it is intended only to speed in-system

programming of the device during the system produc-

tion process.

Distinctive Characteristics

Secured Silicon (SecSi) Sector bullet: Added the 8-

byte unique serial number to description.

Device Bus Operations table

Modified Note 3 to indicate sector protection behavior

when VIH is asserted on WP#/ACC. Applied Note 3 to

the WP#/ACC column for write operations.

Ordering Information

Added the “N” designator to the optional processing

section.

Secured Silicon (SecSi) Sector Flash Memory

Region

Modified explanatory text to indicate that devices now

have an 8-byte unique ESN in addition to the 16-byte

random ESN. Added table for address range

clarification.

Revision A+4 (May 14, 1999)

Global

Deleted all references to the unique ESN.

Revision A+5 (July 23, 1999)

Global

Added 90 ns speed option.

Revision A+6 (September 1, 1999)

AC Characteristics

Hardware Reset (RESET#) table: Deleted tRPD specifi-

cation. Erase/Program Operations table: Deleted tOES

specification.

Revision A+7 (September 7, 1999)

Distinctive Characteristics

Ultra low power consumption bullet: Corrected values

to match those in the DC Characteristics table.

AC Characteristics

Alternate CE# Controlled Erase/Program Operations:

Deleted tOES specification.

Revision B (December 14, 1999)

AC Characteristics—Figure 17. Program

Operations Timing and Figure 18. Chip/Sector

Erase Operations

Deleted tGHWL and changed OE# waveform to start at

high.

Physical Dimensions

Replaced figures with more detailed illustrations.

Revision C (February 21, 2000)

Removed “Advance Information” designation from data

sheet. Data sheet parameters are now stable; only

speed, package, and temperature range combinations

are expected to change in future revisions.

Device Bus Operations table

Changed standby voltage specification to VCC ± 0.2 V.

Standby Mode

Changed standby voltage specification to VCC ± 0.2 V.

DC Characteristics table

Changed test conditions for ICC3, ICC4, ICC5 to VCC ± 0.2

Revision C+1 (November 14, 2000)

Global

Added dash to speed options and OPNs. Added table

of contents.

AC Characteristics—Read Operations

Changed tDF to 16 ns for all speeds.

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