IXTJ3N150 datasheet(1/4 Pages) IXYS

Part #	IXTJ3N150

Description	N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 4 page

DS100615A(12/17)

High Voltage

Power MOSFET

Features



Silicon Chip on Direct-Copper Bond

(DCB) Substrate



Isolated Mounting Surface



2500V~ Electrical Isolation



Fast Intrinsic Diode



Avalanche Rated



Molding Epoxies meet UL 94 V-0

Flammability Classification

Advantages



Easy to Mount



Space Savings



High Power Density

Applications



High Voltage Power Supplies



Capacitor Discharge Applications



Pulse Circuits

IXTJ3N150

V

DSS

= 1500V

I

D25

= 2.3A

R

DS(on) 

 8.0



Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

1500

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

1500

V

GSS

Continuous

30

V

GSM

Transient

40

V

I

D25

T

C = 25C

2.3

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

9.0

A

I

A

T

C = 25C3

A

E

AS

T

C = 25C

250

mJ

dv/dt

I

S

 I

DM, VDD  VDSS,TJ  150C

5

V/ns

P

D

T

C = 25C

110

W

T

J

- 55 ... +150

C

T

JM

150

C

T

stg

- 55 ... +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062in.) from Case for 10s

260

°C

F

C

Mounting Torque

1.13 / 10

Nm/lb.in

V

ISOL

50/60 Hz, RM, t = 1min

2500

V~

Weight

5

g

Advance Technical Information

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

(Electrically Isolated Tab)

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250A

1500

V

GS(th)

V

DS = VGS, ID = 250A

2.5

5.0

V

I

GSS

V

GS = 30V, VDS = 0V

100 nA

I

DSS

V

DS = VDSS, VGS = 0V

10

A

T

J = 125C

100

A

R

DS(on)

V

GS = 10V, ID = 1.5A, Note 1

8.0



G = Gate

D

= Drain

S = Source

G

S

D

ISO TO-247TM

Isolated Tab

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