IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTY1R4N120PHV

IXTA1R4N120P

IXTY1R4N120P

IXTP1R4N120P

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728B1

6,583,505

6,710,463

6,771,478B2 7,071,537

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

g

fs

V

0.8

1.3

S

C

iss

666

pF

C

oss

V

36

pF

C

rss

7.6

pF

Q

g(on)

24.8

nC

Q

gs

V

4.4

nC

Q

gd

12.8

nC

t

d(on)

25

ns

t

r

27

ns

t

d(off)

78

ns

t

f

29

ns

R

thJC

1.45

C/W

R

thCS

TO-220

0.50

C/W

Resistive Switching Times

V

R

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

1.4

A

I

SM

Repetitive, Pulse Width Limited by T

JM

4.2

A

V

SD

I

1.5

V

t

rr

900

ns

I

2. On through-hole packages, R

location must be 5mm or less from the package body.