IXTF2N300P3 datasheet(1/5 Pages) IXYS

Part #	IXTF2N300P3

Description	N-Channel Enhancement Mode

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

DS100712(03/16)

N-Channel Enhancement Mode

Features



Silicon Chip on Direct-Copper Bond

(DCB) Substrate



Isolated Mounting Surface



3000

V~ Electrical Isolation



High Blocking Voltage



High Voltage Package

Advantages



Easy to Mount



Space Savings



High Power Density

Applications



High Voltage Power Supplies



Capacitor Discharge Applications



Pulse Circuits



Laser and X-Ray Generation Systems

IXTF2N300P3

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

3000

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

3000

V

GSS

Continuous

20

V

GSM

Transient

30

V

I

D25

T

C = 25C

1.60

A

I

D110

T

C = 110C

0.90

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

6.00

A

P

D

T

C = 25C

160

W

T

J

- 55 ... +150

C

T

JM

150

C

T

stg

- 55 ... +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

Plastic Body for 10s

260

°C

F

C

Mounting Force

20..120 / 4.5..27

N/lb

V

ISOL

50/60Hz, 1 Minute

3000

V~

Weight

6

g

V

DSS

= 3000V

I

D25

= 1.60A

R

DS(on)

 21



Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250A

3000

V

GS(th)

V

DS = VGS, ID = 250A

3.0

5.0

V

I

GSS

V

GS = 20V, VDS = 0V

100 nA

I

DSS

V

DS = VDSS, VGS = 0V

10

A

Note 2, T

J = 125C

500

μA

R

DS(on)

V

GS = 10V, ID = 1A, Note 1

21



Advance Technical Information

1 = Gate

5 = Drain

2 = Source

ISOPLUS i4-PakTM

Isolated Tab

1

5

2

Polar3TM

High Voltage

Power MOSFET

(Electrically Isolated Tab)

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IXTF2N300P3 Datasheet(PDF) 1 Page - IXYS Corporation

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