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BAT54XY Datasheet(PDF) 3 Page - NXP Semiconductors |
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BAT54XY Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 9 page ![]() 9397 750 14141 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 17 January 2005 3 of 9 Philips Semiconductors BAT54XY Schottky barrier quadruple diode in very small SOT363 package 6. Thermal characteristics [1] Soldering point at pins 2, 3, 5 and 6. 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. Table 6: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-s) thermal resistance from junction to soldering point in free air [1] - - 260 K/W Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VF forward voltage see Figure 1; [1] IF = 0.1 mA - - 240 mV IF = 1 mA - - 320 mV IF = 10 mA - - 400 mV IF = 30 mA - - 500 mV IF = 100 mA - - 800 mV IR reverse current VR = 25 V; see Figure 2 --2 µA Cd diode capacitance VR = 1 V; f = 1 MHz; see Figure 3 - - 10 pF |
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