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FZT653TC Datasheet(PDF) 2 Page - Diodes Incorporated

Part # FZT653TC
Description  100V NPN HIGH PERFORMANCE TRANSISTOR
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FZT653TC Datasheet(HTML) 2 Page - Diodes Incorporated

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FZT653
Document Number DS33150 Rev. 7 - 2
2 of 7
www.diodes.com
January 2018
© Diodes Incorporated
FZT653
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
7
V
Continuous Collector Current
IC
2
A
Peak Pulse Current
ICM
6
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 5)
PD
3
W
(Note 6)
2
(Note 7)
1.6
(Note 8)
1.2
Thermal Resistance, Junction to Ambient
(Note 5)
RJA
41.7
°C/W
(Note 6)
62.5
(Note 7)
78.1
(Note 8)
104
Thermal Resistance Junction to Lead
(Note 9)
RJL
12.9
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 10)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes:
5. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under
still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.
7. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper.
8. Same as Note 5, except the device is mounted on minimum recommended pad layout.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.



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