FZT869 datasheet(4/7 Pages) DIODES

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FZT869

Document Number DS33178 Rev. 4 - 2

4 of 7

www.diodes.com

March 2017

FZT869

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

120

—

IC = 100µA

Collector-Emitter Breakdown Voltage

BVCER

120

—



IC = 1µA, RB ≤ 1kΩ

Collector-Emitter Breakdown Voltage (Note 9)

BVCEO

—

IC = 10mA

Emitter-Base Breakdown Voltage

BVEBO

—

IE = 100µA

Collector Cut-off Current

ICBO

—

µA

VCB = 50V

VCB = 50V, TA = +100°C

Collector Cut-off Current

ICER

—

µA

VCE = 50V, RB ≤ 1kΩ

VCE = 50V, TA = +100°C

Emitter Cut-off Current

IEBO

—

VEB = 6V

DC Current Gain (Note 9)

hFE

300

450

—

IC = 10mA, VCE = 1V

300

450

—

IC = 1A, VCE = 1V

200

300

—



IC = 7A, VCE = 1V



100

—



IC = 20A, VCE = 2V

Collector-Emitter Saturation Voltage (Note 9)

VCE(SAT)

—

IC = 0.5mA, IB = 10mA

—



110

IC = 1A, IB = 10mA

—

168

215

IC = 2A, IB = 10mA

—



—

350

IC = 6.5A, IB = 150mA

Base-Emitter Saturation Voltage (Note 9)

VBE(SAT)

—

1.2

IC = 6.5A, IB = 300mA

Base-Emitter Turn-On Voltage (Note 9)

VBE(ON)

—

1.13

IC = 6.5A, VCE = 1V

Current Gain-Bandwidth Product (Note 9)

—

100

—

MHz

IC = 100mA, VCE = 10V,

f = 50MHz

Output Capacitance

COBO

—

VCB = 10V, f = 1MHz

Switching Times

tON

—



—

IC = 1A, VCC = 10V,

IB1 = -IB2 = 100mA

tOFF

—



680

—

Note:

9. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%.

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