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T901N Datasheet(PDF) 3 Page - Infineon Technologies AG |
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T901N Datasheet(HTML) 3 Page - Infineon Technologies AG |
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3 / 11 page ![]() Netz-Thyristor Phase Control Thyristor Technische Information / technical information T901N Date of Publication: 2011-05-02 Revision: 7.0 Seite/page: 3/11 Thermische Eigenschaften Mechanische Eigenschaften Elektrische Eigenschaften / electrical properties Charakteristische Werte / characteristic values Freiwerdezeit circuit commutated turn-off time Tvj = Tvj max, iTM = ITAVM vRM = 100 V, vDM = 0,67 VDRM dvD/dt = 20 V/µs, -diT/dt = 10 A/µs 4.Kennbuchstabe / 4 th letter O tq typ. 300 µs Sperrverzögerungsladung recovered charge Tvj = Tvj max iTM = ITAVM, -diT/dt = 10 A/µs VR = 0,5VRRM, VRM = 0,8VRRM Qr max. 7,5 mAs Rückstromspitze peak reverse recovery current Tvj = Tvj max iTM = ITAVM, -diT/dt = 10 A/µs VR = 0,5VRRM, VRM = 0,8VRRM IRM max. 220 A Thermische Eigenschaften / thermal properties Innerer Wärmewiderstand thermal resistance, junction to case Kühlfläche / cooling surface beidseitig / two-sided, θ = 180°sin beidseitig / two-sided, DC Anode / anode, DC Kathode / cathode, DC RthJC max. max. max. max. 18,5 17,0 30,5 38,5 K/kW K/kW K/kW K/kW Übergangs-Wärmewiderstand thermal resistance, case to heatsink Kühlfläche / cooling surface beidseitig / two-sided einseitig / single-sided RthCH max. max. 4,0 8,0 K/kW K/kW Höchstzulässige Sperrschichttemperatur maximum junction temperature Tvj max 125 °C Betriebstemperatur operating temperature Tc op -40...+125 °C Lagertemperatur storage temperature Tstg -40...+150 °C Mechanische Eigenschaften / mechanical properties Gehäuse, siehe Anlage case, see annex Seite 4 page 4 Si-Element mit Druckkontakt Si-pellet with pressure contact Anpresskraft clamping force F 15...24 kN Steueranschlüsse control terminals DIN 46244 Gate Kathode /Cathode A 2,8x0,8 A 4,8x0,8 Gewicht weight G typ. 550 g Kriechstrecke creepage distance 25 mm Schwingfestigkeit vibration resistance f = 50 Hz 50 m/s² |
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