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MMBTRC110SS Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # MMBTRC110SS
Description  SMD Digital NPN Transistors
PDF  2 Pages
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

MMBTRC110SS Datasheet(HTML) 1 Page - Diotec Semiconductor

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MMBTRC110SS ... MMBTRC114SS
MMBTRC110SS ... MMBTRC114SS
SMD Digital NPN Transistors
SMD Digital-NPN-Transistoren
IO
= 100 mA
Tjmax = 150°C
VO
= 50 V
Ptot = 200 mW
Version 2018-02-14
SOT-23
(TO-236)
1 = In
2 = Gnd
3 = Out
Dimensions - Maße [mm]
Typical Applications
Digital controls
Switching, Signal processing
Commercial grade
1)
Typische Anwendungen
Digitale Steuerungen
Schalten, Signalverarbeitung
Standardausführung
1)
Features
Cost and space savings by
integrated bias resistor
Compliant to RoHS, REACH,
Conflict Minerals
1)
Besonderheiten
Platz- und Kosteneinsparung durch
integrierten Vorwiderstand
Konform zu RoHS, REACH,
Konfliktmineralien
1)
Mechanical Data
1)
Mechanische Daten
1)
Taped and reeled
3000 / 7“
Gegurtet auf Rolle
Weight approx.
0.01 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL = 1
Maximum ratings
2)
Grenzwerte
2)
Output voltage – Ausgangs-Spannung
VO
50 V
Output current – Ausgangs-Strom
IO
100 mA
Power dissipation – Verlustleistung
Ptot
200 mW
3)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics
Kennwerte
Resistor values – Widerstandswerte
Type
Code
R1 [kΩ]
MMBTRC110SS
tbd
4.7
MMBTRC111SS
tbd
10
MMBTRC112SS
tbd
100
MMBTRC113SS
tbd
22
MMBTRC114SS
tbd
47
Tj = 25°C
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis
4)
VCE = 5 V
IC = 1 mA
hFE
120
–
–
1
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
TA = 25°C, unless otherwise specified – TA = 25°C, wenn nicht anders angegeben
3
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
4
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
Pb
RoHS
1.1
+0.1
0.4
+0.1
2.9
±0.1
1
2
3
Type
Code
1.9
±0.1
-0.05
-0.2
3
1
2
R1
Output
Input
Ground


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