| Electronic Components Datasheet Search |
|
MMBTRC110SS Datasheet(PDF) 1 Page - Diotec Semiconductor |
|
|
|||||||||||||||||||||||||||||
MMBTRC110SS Datasheet(HTML) 1 Page - Diotec Semiconductor |
|
1 / 2 page ![]() MMBTRC110SS ... MMBTRC114SS MMBTRC110SS ... MMBTRC114SS SMD Digital NPN Transistors SMD Digital-NPN-Transistoren IO = 100 mA Tjmax = 150°C VO = 50 V Ptot = 200 mW Version 2018-02-14 SOT-23 (TO-236) 1 = In 2 = Gnd 3 = Out Dimensions - Maße [mm] Typical Applications Digital controls Switching, Signal processing Commercial grade 1) Typische Anwendungen Digitale Steuerungen Schalten, Signalverarbeitung Standardausführung 1) Features Cost and space savings by integrated bias resistor Compliant to RoHS, REACH, Conflict Minerals 1) Besonderheiten Platz- und Kosteneinsparung durch integrierten Vorwiderstand Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanical Data 1) Mechanische Daten 1) Taped and reeled 3000 / 7“ Gegurtet auf Rolle Weight approx. 0.01 g Gewicht ca. Case material UL 94V-0 Gehäusematerial Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen MSL = 1 Maximum ratings 2) Grenzwerte 2) Output voltage – Ausgangs-Spannung VO 50 V Output current – Ausgangs-Strom IO 100 mA Power dissipation – Verlustleistung Ptot 200 mW 3) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics Kennwerte Resistor values – Widerstandswerte Type Code R1 [kΩ] MMBTRC110SS tbd 4.7 MMBTRC111SS tbd 10 MMBTRC112SS tbd 100 MMBTRC113SS tbd 22 MMBTRC114SS tbd 47 Tj = 25°C Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 4) VCE = 5 V IC = 1 mA hFE 120 – – 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 TA = 25°C, unless otherwise specified – TA = 25°C, wenn nicht anders angegeben 3 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden 4 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 Pb RoHS 1.1 +0.1 0.4 +0.1 2.9 ±0.1 1 2 3 Type Code 1.9 ±0.1 -0.05 -0.2 3 1 2 R1 Output Input Ground |
Similar Part No. - MMBTRC110SS |
|
Similar Description - MMBTRC110SS |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |