The Smart Timing Choice



The Smart Timing Choice



SiT5000

Standard Frequency MEMS (VC)TCXO

Rev. 1.0

Page 2 of 7

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Environmental Compliance

Pin Configuration

Pin

Symbol

Functionality

1VC/OE/ST/NC

V control

Voltage control

Output

Enable

L: output is high impedance. Only output driver is disabled.

Standby

L: output is low (weak pull down). Device goes to sleep mode. Supply

current reduces to I_std.

NC

No connect (input receiver off)

2

GND

Power

Electrical and case ground

3

CLK

Output

Oscillator output

4

VDD

Power

Power supply voltage

Note:

2. A pull-up resistor of <10 k? between OE/ ST pin and Vdd is recommended in high noise environment when the device operates in OE/ST mode.

Absolute Maximum

Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual perfor-

mance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.

Parameter

Min.

Max.

Unit

Storage Temperature

-65

150

°C

VDD

-0.5

4

V

Electrostatic Discharge

–

2000

V

Soldering Temperature (follow standard Pb free soldering guidelines)

–

260

°C

Thermal Consideration

Package

(°C/W)

(°C/W)

(°C/W)

7050

191

263

27

5032

97

199

24

3225

109

212

27

2520

117

222

26

Parameter

Condition/Test Method

Mechanical Shock

MIL-STD-883F, Method 2002

Mechanical Vibration

MIL-STD-883F, Method 2007

Temperature Cycle

JESD22, Method A104

Solderability

MIL-STD-883F, Method 2003

Moisture Sensitivity Level

MSL1 @ 260°C

1

4

VC/OE/ST

VDD

3

2

GND

OUT

Note:

1. All electrical specifications in the above table are measured with 15pF output load, Contact SiTime for higher drive options.

Electrical Characteristics (continued)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Condition

Startup Time

T_start

–

–

10

ms

Measured from the time Vdd reaches its rated minimum value

OE Enable/Disable Time

T_oe

–

–

150

ns

f = 80 MHz. For other frequencies, T_oe = 100 ns + 3 cycles

Resume Time

T_resume

–

6

10

ms

Measured from the time ST pin crosses 50% threshold

RMS Period Jitter

T_jitt

–

1.7

2

ps

f = 10 MHz, Vdd = 2.5V, 2.8V or 3.3V

–

1.7

2

ps

f = 10 MHz, Vdd = 1.8V

RMS Phase Jitter (random)

T_phj

–

0.5

1

ps

f = 10 MHz, Integration bandwidth = 12 kHz to 20 MHz, All Vdds

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